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| SPP46N03 SIPMOS(R) Power Transistor Features * N channel * Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 46 V A Enhancement mode RDS(on) 0.015 * Avalanche rated * dv/dt rated * 175C operating temperature Type SPP46N03 SPB46N03 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4742-A2 Tube P-TO263-3-2 Q67040-S4145-A3 Tape and Reel Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 46 46 184 250 12 6 kV/s mJ Unit A ID TC = 25 C, 1) TC = 100 C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 C Avalanche energy, single pulse ID = 46 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 46 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot T j , Tstg 20 120 -55... +175 55/175/56 V W C TC = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1 Semiconductor Group SPP46N03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 1.25 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 A 0.1 10 1 100 100 nA 0.009 0.015 V Unit V(BR)DSS VGS(th) I DSS 30 2.1 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 80 A Zero gate voltage drain current VDS = 30 V, VGS = 0 V, T j = 25 C VDS = 30 V, VGS = 0 V, T j = 150 C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 46 A 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 SPP46N03 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 39 1400 645 260 13 max. 1750 810 325 20 ns S pF Unit g fs Ciss Coss Crss t d(on) 20 - VDS2*ID*RDS(on)max , ID = 46 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 10 V, ID = 46 A, RG = 6.8 Rise time tr - 24 36 VDD = 15 V, V GS = 10 V, ID = 46 A, RG = 6.8 Turn-off delay time t d(off) - 27 42 VDD = 15 V, V GS = 10 V, ID = 46 A, RG = 6.8 Fall time tf - 24 36 VDD = 15 V, V GS = 10 V, ID = 46 A, RG = 6.8 Semiconductor Group 3 SPP46N03 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 7 19 39 5.5 max. 11 28.5 60 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 24 V, ID = 46 A Gate to drain charge VDD = 24 V, ID = 46 A Gate charge total VDD = 24 V, ID = 46 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 46 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.06 40 0.04 46 184 1.7 60 0.06 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 92 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/s Semiconductor Group 4 SPP46N03 Power Dissipation Drain current Ptot = f (TC) SPP46N03 ID = f (TC ) parameter: VGS 10 V SPP46N03 130 W 55 A 110 45 100 90 40 35 30 25 20 15 30 20 10 0 0 20 40 60 80 100 120 140 160 C 190 10 5 0 0 20 40 60 80 100 120 140 160 C 190 Ptot 70 60 50 40 TC ID 80 TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 C 10 3 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP46N03 SPP46N03 K/W A tp = 41.0s 10 0 /I D 100 s R DS ( Z thJC ID on ) = 10 2 DS 10 -1 V 10 -2 D = 0.50 1 ms 0.20 10 -3 10 1 10 ms 0.10 0.05 single pulse 0.02 0.01 DC 10 -4 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Semiconductor Group 5 tp SPP46N03 Typ. output characteristics I D = f (VDS) parameter: tp = 80 s SPP46N03 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPP46N03 120 A Ptot = 120W 0.050 l h ijk g f VGS [V] a 4.0 b c 4.5 b c d e 100 90 80 0.040 RDS(on) 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 d 0.035 0.030 0.025 0.020 0.015 0.010 0.005 VGS [V] = b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 ID e 70 60 50 40 c e f g dh i j k l 30 20 10 a b f g hk i j l k l 10.0 20.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 0.000 0 10 20 30 40 50 60 70 A 85 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on)max 70 A Typ. forward transconductance gfs = f(ID ); Tj = 25C parameter: gfs 45 S 60 55 50 35 30 40 35 30 25 20 15 10 5 0 2.8 3.2 3.8 4.2 4.8 5.2 V gfs 25 20 15 10 5 0 0 ID 45 6.0 10 20 30 40 A 60 VGS Semiconductor Group 6 ID SPP46N03 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 46 A, VGS = 10 V SPP46N03 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 80 A 5.0 V 4.4 4.0 0.036 0.028 VGS(th) 98% RDS(on) 3.6 3.2 2.8 0.024 0.020 0.016 0.012 0.008 0.004 0.000 -60 2.4 2.0 max typ 1.6 1.2 0.8 typ min 0.4 0.0 -60 -20 20 60 100 140 C -20 20 60 100 140 C 200 200 Tj Tj Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPP46N03 A pF Ciss C 10 2 10 3 Coss IF 10 1 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 4 8 12 16 20 24 28 32 V 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS Semiconductor Group 7 VSD SPP46N03 Avalanche Energy EAS = f (Tj) parameter: ID = 46 A, V DD = 25 V RGS = 25 250 Typ. gate charge VGS = f (QGate ) parameter: ID puls = 46 A SPP46N03 16 V mJ 12 VGS EAS 150 10 0,2 VDS max 8 0,8 VDS max 100 6 4 50 2 0 20 40 60 80 100 120 140 C 180 0 0 10 20 30 40 nC 60 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP46N03 37 V 35 V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Semiconductor Group 8 SPP46N03 Edition 02 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 9 |
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